Advanced through substrate via metallization in three dimensional semiconductor integration

ABSTRACT

A method providing a high aspect ratio through substrate via in a substrate is described. The through substrate via has vertical sidewalls and a horizontal bottom. The substrate has a horizontal field area surrounding the through substrate via. A first metallic barrier layer is deposited on the sidewalls of the through substrate via. A nitridation process converts a surface portion of the metallic barrier layer to a nitride surface layer. The nitride surface layer enhances the nucleation of subsequent depositions. A first metal layer is deposited to fill the through substrate via. A selective etch creates a recess in the first metal layer in the through substrate via. A second barrier layer is deposited over the recess. A second metal layer is patterned over the second barrier layer filling the recess and creating a contact. Another aspect of the invention is a device produced by the method.

BACKGROUND OF THE INVENTION

This disclosure relates to integrated circuit devices, and morespecifically, to a method and structure to create advanced throughsilicon via structures in semiconductor devices.

As the dimensions of modern integrated circuitry in semiconductor chipscontinues to shrink, conventional lithography is increasingly challengedto make smaller and smaller structures. With the reduced size of theintegrated circuit, packaging the chips more closely together becomesimportant as well. By placing chips closer to each other, theperformance of the overall computer system is improved.

One approach to reduce the distance between devices is three-dimensional(3D) packaging. While reducing the dimensions of the components withinthe integrated circuit improves signal propagation speed, the packaginginterconnects do not become faster merely because the transistors do.Three dimensional integrated circuits address the scaling challenge bystacking multiple chips and connecting them in the third dimension. In3D packaging, there are a number of competing technologies, includingpackage-on-package, die-to-die, die-to-wafer and flip chip. In severalof these technologies, a through-substrate via (TSV), most commonly athrough-silicon via, is used as a vertical electrical connection (via)passing completely through a silicon wafer or die. When TSVs are used asan interconnect to create 3D packages and 3D integrated circuits ascompared to alternatives such as package-on-package, the density of thevias is substantially higher, and the length of the connections isshorter.

BRIEF SUMMARY

According to this disclosure, an advanced through silicon via structureand a method for constructing the structure are described. In one aspectof the invention, a method providing a high aspect ratio throughsubstrate via in a substrate is described. The through substrate via hasvertical sidewalls and a horizontal bottom. The substrate has ahorizontal field area surrounding the through substrate via. A firstmetallic barrier layer is deposited on the sidewalls of the throughsubstrate via. A nitridation process converts a surface portion of themetallic barrier layer to a nitride surface layer. The nitride surfacelayer enhances the nucleation of subsequent depositions. A first metallayer is deposited to fill the through substrate via. A selective etchcreates a recess in the first metal layer in the through substrate via.A second barrier layer is deposited over the recess. A second metallayer is patterned over the second barrier layer filling the recess andcreating a contact.

Another aspect of the invention is a device. The device includes asubstrate including integrated circuit devices. A high aspect ratiothrough substrate via is disposed in the substrate. The throughsubstrate via has vertical sidewalls and a horizontal bottom. Thesubstrate has a horizontal field area surrounding the through substratevia. A metallic barrier layer is disposed on the sidewalls of thethrough substrate via. A surface portion of the metallic barrier layerhas been converted to a nitride surface layer by a nitridation process.The nitride surface layer enhances the nucleation of subsequentdepositions. A first metal layer fills the through substrate via and hasa recess in an upper portion. A second barrier layer is disposed overthe recess. A second metal layer is disposed over the second barrierlayer and creates a contact.

The foregoing has outlined some of the more pertinent features of thedisclosed subject matter. These features should be construed to bemerely illustrative. Many other beneficial results can be attained byapplying the disclosed subject matter in a different manner or bymodifying the invention as will be described.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings which are notnecessarily drawing to scale, and in which:

FIGS. 1A and 1B respectively illustrate a cross sectional view of a setof TSVs formed by the present invention and a cross sectional view of aset of TSVs formed by a prior art process.

FIG. 2 is a cross-sectional diagram depicting the TSV structure afterpatterning and etching steps have been performed according to anembodiment of the invention;

FIG. 3 is a cross-sectional diagram depicting the TSV structure after abarrier layer step has been performed according to an embodiment of theinvention;

FIG. 4 is a cross-sectional diagram depicting the TSV structure after anitridation treatment step has been performed according to an embodimentof the invention;

FIG. 5 is a cross-sectional diagram depicting the TSV structure after awetting enhancement liner deposition step has been performed accordingto an embodiment of the invention;

FIG. 6 is a cross-sectional diagram depicting the TSV structure after acopper seed layer step has been performed according to an embodiment ofthe invention;

FIG. 7 is a cross-sectional diagram depicting the TSV structure after acopper deposition layer step has been performed according to anembodiment of the invention;

FIG. 8 is a cross-sectional diagram depicting the TSV structure after achemical mechanical polishing step has been performed according to anembodiment of the invention;

FIG. 9 is a cross-sectional diagram depicting the TSV structure aftercapping layer deposition and dielectric deposition steps have beenperformed according to aa embodiment of the invention;

FIG. 10 is a cross-sectional diagram depicting the TSV structure after apatterning step has been performed according to an embodiment of theinvention;

FIG. 11 is a cross-sectional diagram depicting the TSV structure after awet etch step has been performed according to an embodiment of theinvention;

FIG. 12 is a cross-sectional diagram depicting the TSV structure after abarrier liner step has been performed according to an embodiment of theinvention;

FIG. 13 is a cross-sectional diagram depicting the TSV structure after ametal deposition step has been performed according to an embodiment ofthe invention; and

FIG. 14 is a cross-sectional diagram depicting a three dimensionalintegrated circuit comprising of two bonded wafers using the TSVstructure of an embodiment of the invention to provide theinterconnections.

DETAILED DESCRIPTION OF THE DRAWINGS

At a high level, the invention includes an advanced through-silicon viaand a method for fabricating the TSV structure with improved performanceand yield by increasing the wettability of the sides of the via holewith a nitridation treatment. In the prior art, due to high aspect ratioof the TSV structure, metallization has been a critical challenge. Theinventors have observed that this nitridation treatment enhancesnucleation of the deposited metallic liner which results in bettercopper metal fill quality. The plasma nitridation process enhances TSVmetallization and reduces voids by more than 50% than the currentprocesses of record.

A “substrate” as used herein can comprise any material appropriate forthe given purpose (whether now known or developed in the future) and cancomprise, for example, Si, SiC, SiGe, SiGeC, Ge alloys, GaAs, InAs, InP,other III-V or II-VI compound semiconductors, or organic semiconductorstructures. Insulators can also be used as substrates in embodiments ofthe invention.

For purposes herein, a “semiconductor” is a material or structure thatmay include an implanted impurity that allows the material to sometimesbe conductive and sometimes be a non-conductive, based on electron andhole carrier concentration. As used herein, “implantation processes” cantake any appropriate form (whether now known or developed in the future)and can comprise, for example, ion implantation.

For purposes herein, an “insulator” is a relative term that means amaterial or structure that allows substantially less (<95%) electricalcurrent to flow than does a “conductor.” The dielectrics (insulators)mentioned herein can, for example, be grown from either a dry oxygenambient or steam and then patterned. Alternatively, the dielectricsherein may be formed from any of the many candidate high dielectricconstant (high-k) materials, including but not limited to hafnium oxide,aluminum oxide, silicon nitride, silicon oxynitride, a gate dielectricstack of SiO2 and Si3N4, and metal oxides like tantalum oxide that haverelative dielectric constants above that of SiO2 (above 3.9). Thedielectric can be a combination of two or more of these materials. Thethickness of dielectrics herein may vary contingent upon the requireddevice performance. The conductors mentioned herein can be formed of anyconductive material, such as polycrystalline silicon (polysilicon),amorphous silicon, a combination of amorphous silicon and polysilicon,and polysilicon-germanium, rendered conductive by the presence of asuitable dopant. Alternatively, the conductors herein may be one or moremetals, such as tungsten, hafnium, tantalum, molybdenum, titanium, ornickel, or a metal silicide, any alloys of such metals, and may bedeposited using physical vapor deposition, chemical vapor deposition, orany other technique known in the art.

When patterning any material herein, the material to be patterned can begrown or deposited in any known manner and a patterning layer (such asan organic photoresist aka “resist”) can be formed over the material.The patterning layer (resist) can be exposed to some form of lightradiation (e.g., patterned exposure, laser exposure) provided in a lightexposure pattern, and then the resist is developed using a chemicalagent. This process changes the characteristic of the portion of theresist that was exposed to the light. Then one portion of the resist canbe rinsed off, leaving the other portion of the resist to protect thematerial to be patterned. A material removal process is then performed(e.g., plasma etching) to remove the unprotected portions of thematerial to be patterned. The resist is subsequently removed to leavethe underlying material patterned according to the light exposurepattern.

For purposes herein, “sidewall structures” are structures that arewell-known to those ordinarily skilled in the art and are generallyformed by depositing or growing a conformal insulating layer (such asany of the insulators mentioned above) and then performing a directionaletching process (anisotropic) that etches material from horizontalsurfaces at a greater rate than its removes material from verticalsurfaces, thereby leaving insulating material along the verticalsidewalls of structures. This material left on the vertical sidewalls isreferred to as a sidewall structure. The sidewall structures can be usedas masking structures for further semiconducting processing steps.

Embodiments will be explained below with reference to the accompanyingdrawings.

FIGS. 1A and 1B are respectively a cross sectional view of a set of TSVsformed by the present invention and a cross sectional view of a set ofTSVs formed by a prior art process. As shown in FIG. 1A, a set of testTSV structures are etched in a substrate 101 and then filled with aconductor 103 by the process of the present invention. The substratematerial is silicon in some embodiments of the invention. However, otherembodiments use substrates comprises of different semiconductors orinsulators such as SiO2 or Si3N4. In preferred embodiments the substratewill have a thickness on the order of 1 micrometer or greater. Each TSVhas a set of vertical sidewalls and a horizontal bottom. The presentinvention uses a nitridation treatment and a set of metallic linerdepositions to achieve a satisfactory fill of the TSVs. Without thenitridation treatment, as can be seen in FIG. 1B, voids 105 develop inthe metallization. These voids reduce the reliability of theinterconnection between semiconductor chips. In an actual device, onesemiconductor chip or wafer would be placed on top of anothersemiconductor chip or wafer so that the devices and contacts face eachother. The TSVs would be etched through the silicon of the top chip orwafer down to a respective contact and the metallurgy at the top surface107 would connect devices on both chips to the rest of the packaging.These figures also show the high aspect ratio (Height/width) which isoften greater than 10:1. The high aspect ratio hampers the formation ofgood metallization in the through substrate vias.

FIG. 2 is a cross-sectional diagram depicting the TSV structure afterpatterning and etching steps have been performed according to a firstembodiment of the invention. As is mentioned above, the substrate 201 issilicon in preferred embodiments, however, other substrates, such asdielectric materials, are used in other embodiments of the invention.Each TSV has a set of vertical sidewalls and a horizontal bottom. Forease in illustration, the via 202 which has been etched into thesubstrate has a fairly even aspect ratio (H/D) of height (=H) to width(=D). However, in the actual device, there is a high aspect ratio(Height/width) which is often greater than 10:1. The height of the via202 is the depth of the substrate to the contact metallurgy; thesubstrate can be thinned through a chemical mechanical polish process. Atypical range of heights of the via is 1 micrometer to 500 micrometersand a typical range of width of the via is 100 nanometers to 20micrometers.

FIG. 3 is a cross-sectional diagram depicting the TSV structure after abarrier layer step has been performed according to a first embodiment ofthe invention. The barrier layer 203 is deposited over the sidewalls andbottom of the substrate utilizing any conventional deposition processincluding, for example, chemical vapor deposition (CVD), plasma enhancedchemical vapor deposition (PECVD), physical vapor deposition (PVD),sputtering, plating, chemical solution deposition and electrolessplating. The thickness of the layer can vary according to the type ofmetal layer being formed and the technique used in forming the layer203. Typically, the layer 203 has a thickness from 1 nm to 20 nm, with athickness from 2 nm to 10 nm being more typical. Suitable linermaterials include Ta, Ti, W, Co, Ru, and their nitride materials, TaN,TiN, WN, CoN, RuN. The layer material 203 prevents the diffusion of thesubsequent copper layer into the substrate.

FIG. 4 is a cross-sectional diagram depicting the TSV structure after anitridation treatment step has been performed according to a firstembodiment of the invention. The purpose of this step is to nitridizethe surface of the deposited liner layer. A nitride layer 205 is formedin a plasma nitridation treatment over the liner material. In oneembodiment, the nitridation process uses either nitrogen or ammonia, ora mixture of the two gases as a reactant. Other nitrogen containinggases can be used in other embodiments. In one embodiment of the presentinvention, the nitridation process is a thermal nitridation processbetween 100-500 degrees Celsius, preferably 100-400 degrees Celsius. Inanother embodiment, the nitridation process is a plasma ion nitridationprocess. In one embodiment, the nitride layer 205 has a thicknessbetween 3-20 angstroms. The nitride layer that is formed is a nitride ofthe underlying liner layer 203. When the barrier layer is already anitride, the surface layer of the deposited barrier layer will have ahigher level/percentage of N % than the remainder of the barrier layer.

FIG. 5 is a cross-sectional diagram depicting the TSV structure after awetting enhancement liner deposition step has been performed accordingto a first embodiment of the invention. The nitridation of the barrierliner 203, forming the thin nitride layer 205, enhances the nucleationof the wetting enhancement liner 207. The wetting enhancement liner 207is deposited over the sidewalls and bottom of the TSV utilizing anyconventional deposition process including, for example, chemical vapordeposition (CVD), plasma enhanced chemical vapor deposition (PECVD),physical vapor deposition (PVD), sputtering, plating, chemical solutiondeposition and electroless plating. The thickness of the liner can varydepending on the number of metal layers within the liner 207, the typeof metal layer being formed and the technique used in forming the same.Typically, the liner 207 has a thickness from 1 nm to 20 nm, with athickness from 2 nm to 10 nm being more typical. Suitable linermaterials include W, Co, Ru and Rh. The wetting enhancement liner 207promotes the adhesion of the subsequent copper layers into the TSVstructure.

FIG. 6 is a cross-sectional diagram depicting the TSV structure after acopper seed layer step has been performed according to a firstembodiment of the invention. The copper seed layer 209 is preferablydeposited by a physical vapor deposition (PVD) process to facilitate alater electrochemical plating step. The copper deposited by the PVDprocess has a greater purity and adhesion to the wetting layer 207 thancopper deposited by an electrochemical plating step. However, the PVDprocess is slow and therefore expensive compared to electroplating. Thethickness of the seed layer 209 can vary depending on the processconditions. Typically, the copper seed layer 209 is relatively thin ascompared to the width of the via, since the later electrochemicalplating step will provide the bulk of the copper for the TSV.Embodiments of the invention have a seed layer having a thickness from 1nm to 100 nm, with a thickness from 10 nm to 50 nm being more typical.However, other embodiments of the invention use other depositiontechnologies including PVD, ALD and CVD.

FIG. 7 is a cross-sectional diagram depicting the TSV structure after acopper deposition layer step has been performed according to a firstembodiment of the invention. In preferred embodiments, the bulk of thecopper layer 209 is deposited in this step and is provided by anelectrochemical plating step. As mentioned above, an electroplating stepis less expensive than a PVD process, but lacks the adhesion propertiesthat the PVD deposited copper possesses. Once the seed layer (shown inthe figure merged into the overall copper layer) is provided, theelectroplated copper has good properties to fill the remainder of theTSV. Typically, the copper layer is relatively thick and over fills thevia, i.e. is an overfill layer, since a later chemical mechanicalpolishing step will remove the excess material from the TSV. Embodimentsof the invention have an overfill copper layer having a thickness from20 nm to 2000 nm, with a thickness from 200 nm to 800 nm being moretypical.

FIG. 8 is a cross-sectional diagram depicting the TSV structure after achemical mechanical polishing step has been performed according to afirst embodiment of the invention. The drawing depicts the structureafter a planarization process such as a chemical mechanical polishing(CMP) step has been performed according to a first embodiment of theinvention. Typically, a CMP process uses an abrasive and corrosivechemical slurry (commonly a colloid) in conjunction with a polishingpad. The pad and wafer are pressed together by a dynamic polishing headand held in place by a plastic retaining ring. As shown, the CMP stephas removed the excess copper layer 209, the excess wetting enhancementliner 207, the excess nitride layer 205 and the excess liner layer 203on field areas of the substrate outside the TSVs. Other planarizationprocesses are known to the art and are used in alternative embodimentsof the invention.

FIG. 9 is a cross-sectional diagram depicting the TSV structure aftercapping layer deposition and dielectric deposition steps have beenperformed according to an embodiment of the invention. In a preferredembodiment of the invention, the capping layer 211 is a silicon carbidelayer. Other embodiments of the invention use silicon nitride or otherlayers have different etch characteristics than the dielectric layer213. The capping layer material 211 is formed utilizing any conventionaldeposition process including, but not limited to chemical vapordeposition (CVD), plasma enhanced chemical vapor deposition (PECVD),evaporation, chemical solution deposition and spin-on coating.Embodiments of the invention have a capping layer having a thicknessfrom 2 nm to 80 nm, with a thickness from 10 nm to 50 nm being moretypical. The dielectric material 213 comprises any dielectric includinginorganic dielectrics or organic dielectrics. The dielectric material213 typically has a dielectric constant that is about 3.0 or less, witha dielectric constant of about 2.8 or less being even more typical. Thethickness of the dielectric material 213 may vary depending upon thedielectric material used as well as the exact number of dielectriclayers within the dielectric material 213. The dielectric material 213is formed utilizing any conventional deposition process including, butnot limited to chemical vapor deposition (CVD), plasma enhanced chemicalvapor deposition (PECVD), evaporation, chemical solution deposition andspin-on coating. Embodiments of the invention have a dielectric layer213 having a thickness from 50 nm to 500 nm, with a thickness from 100nm to 300 nm being more typical.

FIG. 10 is a cross-sectional diagram depicting the TSV structure after apatterning step has been performed according to an embodiment of theinvention. The aperture 214 is formed utilizing conventional lithographyand etching. Contact metallurgy will be formed in the aperture insubsequent processing as will be described below. The lithographic stepincludes forming a photoresist (organic, inorganic or hybrid) atop thedielectric utilizing a conventional deposition process such as, forexample, CVD, PECVD and spin-on coating. Following formation of thephotoresist, the photoresist is exposed to a desired pattern ofradiation. Next, the exposed photoresist is developed utilizing aconventional resist development process. After the development step, anetching step is performed to transfer the pattern from the patternedphotoresist into first the dielectric layer 213 and then the cappinglayer material 211. The patterned photoresist is typically removed fromthe surface of the structure after transferring the pattern into thedielectric 213 and capping layer 211 utilizing a conventional resiststripping process such as, for example, ashing. The etching step used informing the aperture 214 comprises a dry etching process (includingreactive ion etching, ion beam etching, plasma etching or laserablation), a wet chemical etching process or any combination thereof. Inpreferred embodiments, a two-step reactive ion etching is used to formthe aperture 214. The stepped profile shown in the drawing can beobtained using multiple photoresist steps or by using a hardmask (notshown in the figures) to complete the patterning. Such techniques arewell known to the art.

FIG. 11 is a cross-sectional diagram depicting the TSV structure after awet etch step has been performed according to an embodiment of theinvention. In this step, the wet etch solution is only selective to theconductive material 209 leaving the dielectric layer 213 and cappinglayer and liner layers 203, 205, 207 intact. Note that the shape of theaperture 214 has changed so that a recess is formed in the top of theconductive material 209, e.g., the copper in the TSV.

FIG. 12 is a cross-sectional diagram depicting the TSV structure after abarrier liner step has been performed according to an embodiment of theinvention. The barrier layer 215 is deposited over the structureutilizing any conventional deposition process including, for example,chemical vapor deposition (CVD), plasma enhanced chemical vapordeposition (PECVD), physical vapor deposition (PVD), sputtering,plating, chemical solution deposition and electroless plating. Thethickness of the barrier layer can vary with the type of metal layerbeing formed and the technique used in forming the layer. Typically, theliner 215 has a thickness from 1 nm to 50 nm, with a thickness from 2 nmto 20 nm being more typical. Suitable liner materials include Ta, Ti, W,Co, Ru, and their nitride materials, TaN, TiN, WN, CoN, RuN. The barrierlayer material 215 prevents the diffusion of the subsequent copper layerinto the dielectric 213 and capping layer 211.

FIG. 13 is a cross-sectional diagram depicting the TSV structure after ametal deposition step has been performed according to an embodiment ofthe invention. In preferred embodiments, the metal layer 217 is a copperlayer and is provided by an electrochemical plating step. However, otherdeposition techniques can be used. Typically, the copper layer 217 isrelatively thick and over fills the aperture, since a later chemicalmechanical polishing step will remove the excess material from the fieldarea surrounding the contact area so that the resulting contact 217 isformed so that the contact 217 is coplanar with the barrier layer 215 ordielectric layer 213. Other planarization processes are used in otherembodiments of the invention. Embodiments of the invention have anoverfill copper layer having a thickness from 20 nm to 2000 nm, with athickness from 200 nm to 800 nm being more typical. A thermal annealstep is used to create a desired grain pattern in the copper metallurgy217 down to the boundary of the barrier layer 215. The desired grainpattern is called “bamboo-like” or columnar because of the cylindricaland long grains of the pattern. The thermal anneal of the copper layer217 can be carried out at a selected temperature between 100 to 400degrees Centigrade for 30 minutes-3 hours in a thermal furnace. Thethermal anneal of the copper layer 217 can also be carried out at aselected temperature between 400 to 800 degrees Centigrade for 2seconds-1 minute in a laser anneal plate. Normal metal grain growth,i.e. large grains, starts in the top overburden area and continues intothe bottom patterned features. The driving force to have the graingrowth continue through the pattern features is achievable in low aspectratio features.

FIG. 14 is a cross-sectional diagram depicting a three dimensionalintegrated circuit comprising of two bonded wafers using the TSVstructure of an embodiment of the invention to provide theinterconnections. As shown, lower wafer comprised of substrate 301,device layer 303 and contacts 304 is bonded by bonding layer 305 toupper wafer comprised of contacts 306, device layer 307 and substratelayer 311. Device layers 303 and 311 are shown in a simplified fashionfor ease in illustration, but comprise the normal complement oftransistors and other devices and interconnecting metallurgy. Thecontacts 304 and 306 are composed of a conductive material, e.g.,copper, and are used to electrically interconnect the device layers tothe TSVs 309A-D and the packaging metallurgy 317. The bonding layer iscomprised of a silicon oxide material in preferred embodiments of theinvention. The nitride and wetting layers 310 are shown as a singlelayer for ease in illustration, but would comprise the multiple layersas described above and shown in the preceding figures. Oxide layer 321is deposited to protect the underlying substrate from succeeding layersof packaging metallurgy.

The resulting structure can be included within integrated circuit chips,which can be distributed by the fabricator in wafer form (that is, as asingle wafer that has multiple chips), as a bare die, or in a packagedform. In any case, the chip is then integrated with other chips,discrete circuit elements, and/or other signal processing devices aspart of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

While only one or a limited number of features are illustrated in thedrawings, those ordinarily skilled in the art would understand that manydifferent types of features could be simultaneously formed with theembodiment herein and the drawings are intended to show simultaneousformation of multiple different types of features. However, the drawingshave been simplified to only show a limited number of features forclarity and to allow the reader to more easily recognize the differentfeatures illustrated. This is not intended to limit the inventionbecause, as would be understood by those ordinarily skilled in the art,the invention is applicable to structures that include many of each typeof feature shown in the drawings.

While the above describes a particular order of operations performed bycertain embodiments of the invention, it should be understood that suchorder is exemplary, as alternative embodiments may perform theoperations in a different order, combine certain operations, overlapcertain operations, or the like. References in the specification to agiven embodiment indicate that the embodiment described may include aparticular feature, structure, or characteristic, but every embodimentmay not necessarily include the particular feature, structure, orcharacteristic.

In addition, terms such as “right”, “left”, “vertical”, “horizontal”,“top”, “bottom”, “upper”, “lower”, “under”, “below”, “underlying”,“over”, “overlying”, “parallel”, “perpendicular”, etc., used herein areunderstood to be relative locations as they are oriented and illustratedin the drawings (unless otherwise indicated). Terms such as “touching”,“on”, “in direct contact”, “abutting”, “directly adjacent to”, etc.,mean that at least one element physically contacts another element(without other elements separating the described elements).

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims below are intended toinclude any structure, material, or act for performing the function incombination with other claimed elements as specifically claimed. Thedescription of the present invention has been presented for purposes ofillustration and description, but is not intended to be exhaustive orlimited to the invention in the form disclosed. Many modifications andvariations will be apparent to those of ordinary skill in the artwithout departing from the scope and spirit of the invention. Theembodiment was chosen and described in order to best explain theprinciples of the invention and the practical application, and to enableothers of ordinary skill in the art to understand the invention forvarious embodiments with various modifications as are suited to theparticular use contemplated.

Having described our invention, what we now claim is as follows:
 1. A method for fabricating a through substrate via structure comprising: providing a through substrate via in a substrate, the through substrate via having vertical sidewalls and a horizontal bottom, the substrate having a horizontal field area surrounding the through substrate via; depositing a first metallic barrier layer on the sidewalls of the through substrate via; performing a nitridation process to convert a surface portion of the metallic barrier layer to a nitride surface layer, wherein the nitride surface layer enhances a nucleation of a subsequent deposition; depositing a first metal layer to fill the through substrate via; performing a selective etch to create a recess in the first metal layer in the through substrate via, wherein the recess forms a bowl-like depression in the first metal layer, the first metal layer having a first height equal to a height of the vertical sidewalls of the through substrate via at a peripheral region and a second height less than the vertical sidewalls of the through substrate via at a central region; depositing a second barrier layer over the recess; and patterning a second metal layer over the second barrier layer filling the recess and creating a contact to a first integrated circuit layer.
 2. The method as recited in claim 1, further comprising depositing a wetting enhancement liner layer over the nitride surface layer prior to filling the through substrate via with the first metal layer.
 3. The method as recited in claim 1, wherein the second metal layer is deposited by an electrochemical plating process, and the method further comprises a planarization process to remove excess amounts of the second metal layer from the field area.
 4. The method as recited in claim 1, wherein the first metal layer is copper and is deposited in a seed metal layer deposited by a physical vapor deposition process followed by a subsequent metal layer deposited by electrochemical plating process.
 5. The method as recited in claim 1, wherein the through substrate via is a high aspect ratio through substrate via and the high aspect ratio is a ratio of a height of the high aspect ratio through substrate via divided by a width of the high aspect ratio through substrate via and the high aspect ratio is greater than 10:1.
 6. The method as recited in claim 4, wherein the second metal layer is copper, and the method further comprises performing a thermal anneal step to create a bamboo-like grain pattern in the second metal layer including the second metal layer in the recess.
 7. The method as recited in claim 2, wherein the wetting enhancement liner layer is selected from the group consisting of W, Co, Ru and Rh.
 8. The method as recited in claim 1, wherein the nitridation process is selected from the group of a plasma nitridation process and a thermal nitridation process.
 9. The method as recited in claim 6, further comprising: performing a planarization step to remove excess first metal layer from the field area; depositing a dielectric layer over the through substrate via; patterning an aperture in the dielectric layer over the through substrate via, wherein the second metal layer is deposited in the aperture.
 10. The method as recited in claim 1, wherein a plurality of through silicon vias are produced, wherein a first subset of the through silicon vias electrically connect to contacts of the first integrated circuit layer and a second subset of the through silicon vias electrically connect to contacts of a second integrated circuit layer. 11-18. (canceled)
 19. A method for fabricating a through substrate via structure comprising: providing a through substrate via in a substrate, the through substrate via having vertical sidewalls and a horizontal bottom, the substrate having a horizontal field area surrounding the through substrate via; depositing a first metallic barrier layer on the sidewalls of the through substrate via; performing a nitridation process to convert a surface portion of the metallic barrier layer to a nitride surface layer, wherein the nitride surface layer enhances a nucleation of a subsequent deposition; depositing a first metal layer to fill the through substrate via; performing a selective etch to create a recess in the first metal layer in the through substrate via, wherein the recess forms a bowl-like depression in the first metal layer, the first metal layer having a first height equal to a height of the vertical sidewalls of the through substrate via at a peripheral region and a second height less than the vertical sidewalls of the through substrate via at a central region; depositing a second barrier layer over the recess; patterning a copper layer over the second barrier layer filling the recess and creating a contact to a first integrated circuit layer; and performing a thermal anneal step to create a bamboo-like grain pattern in the second metal layer including the second metal layer in the recess. 